Memory type: DDR4
Operating voltage: 1. 2V
Frequency: 2400MHz
Row Cycle Time (tRCmin): 46. 75ns(min. )
Refresh to Active/Refresh: 350ns(min. )
Row Active Time (tRASmin): 29. 125ns(min. )
Maximum Operating Power: TBD W
UL Rating: 94 V - 0
Operating Temperature: 0~+85 degree celsius
Storage Temperature: -55~+100 degree celsius
Pin: 288pin
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
- Low-power auto self refresh (LPASR).
- Data bus inversion (DBI) for data bus.
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS).
- High speed DDR4-2400, 1. 2V operating voltage.